1- The transistor characteristics iD versus Vds for an NMOS device are shown in the figure below. (a) Is this an enhancement-mode or depletion-mode device? (b) Determine the values for Kn and VTN (c) Determine iD(sat) for vGs = 3.5 V and vGs = 4.5 V.
2- The parameters of an n-channel enhancement-mode MOSFER are VTN = 0.5V, k'n = 120μA/v2, and W/L = 4. What is the maximum value of λ and the minimum value of VA such that for VGs = 2V, ro ≥ 200kΩ? 3- An enhancement-mode NMOS transistor has parameters VTNO = 0.8 V, γ = 0.8 V1/2, and Φf. =0.35 V. At what value of VSB will the threshold voltage change by 2 V due to the body effect?